M29W128GL60N6E View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128GL60N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

Command interface

M29W128GH, M29W128GL

Table 17. Program, Erase times and Program, Erase endurance cycles

Parameter

Min

Typ(1)(2) Max(2) Unit

Chip Erase

Block Erase (128 kbytes)(4)

40

400(3)

s

0.5

s

Erase Suspend latency time

25

35

µs

Block Erase timeout

50

µs

Single Byte Program

Byte Program

Write to Buffer Program

(64 bytes at-a-time)

Single Word Program

VPP/WP = VPPH

VPP/WP = VIH

Word Program

Write to Buffer Program

(32 words at-a-time)

Chip Program (byte by byte)

VPP/WP = VPPH

VPP/WP = VIH

Chip Program (word by word)

Chip Program (Write to Buffer Program)(5)

Chip Program (Write to Buffer Program with VPP/WP = VPPH)(5)

Chip Program (Enhanced Buffered Program)(5)

Chip Program (Enhanced Buffered Program with VPP/WP = VPP)(5)

Program Suspend latency time

16

µs

51

200(3)

µs

78

16

µs

51

200(3)

µs

78

270

800(3)

s

135

400(3)

s

20

200(3)

s

13

50(3)

s

8

40

s

5

25

s

5

15

µs

Program/Erase cycles (per block)

100,000

Cycles

Data retention

20

Years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000 program/erase cycles.

4. Block Erase Polling cycle time (seeFigure 24: Data polling AC waveforms).

5. Intrinsic program timing, that means without the time required to execute the bus cycles to load the program commands.

50/94

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