M29W128GL70N6E View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128GL70N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

Registers

M29W128GH, M29W128GL

Table 20. Status Register bits(1)

Operation

Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RB

Program(2)

Any address DQ7 Toggle 0 –

–

00

Program During Erase Suspend Any address DQ7 Toggle 0 –

–

–0

Buffered Program Abort(2)

Any address DQ7 Toggle 0 –

–

10

Program Error

Any address DQ7 Toggle 1 –

–

– Hi-Z

Chip Erase

Any address 0 Toggle 0 1 Toggle – 0

Block Erase before timeout

Erasing block 0 Toggle 0 0 Toggle – 0

Non-erasing

block

0

Toggle

0

0

No

toggle

–

0

Block Erase

Erasing block 0 Toggle 0 1 Toggle – 0

Non-erasing

block

0

Toggle

0

1

No

toggle

–

0

Erase Suspend

Erasing block 1

Non-erasing

block

No

Toggle

0

– Toggle – Hi-Z

Data read as normal

– Hi-Z

Erase Error

Good block

address

0 Toggle 1

Faulty Block

address

0

Toggle

1

1

No

toggle

–

Hi-Z

1 Toggle – Hi-Z

1. Unspecified data bits should be ignored.

2. DQ7 for Write to Buffer Program and Enhanced Buffered Program is related to the last address location

loaded.

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