M29W640FT70N6E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29W640FT70N6E

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

7 DC and AC parameters

M29W640FT, M29W640FB

Table 11. Device Capacitance

Symbol

Parameter

CIN

COUT

Input Capacitance

Output Capacitance

1. Sampled only, not 100% tested.

Table 12. DC Characteristics

Symbol

Parameter

ILI

Input Leakage Current

ILO Output Leakage Current

ICC1 Supply Current (Read)

ICC2 Supply Current (Standby)

ICC3

Supply Current (Program/

Erase)

VIL Input Low Voltage

VIH Input High Voltage

VPP

Voltage for VPP/WP Program

Acceleration

IPP

Current for VPP/WP Program

Acceleration

VOL Output Low Voltage

VOH Output High Voltage

VID Identification Voltage

VLKO(1)

Program/Erase Lockout

Supply Voltage

1. Sampled only, not 100% tested.

Test Condition

VIN = 0V

VOUT = 0V

Min

Max

Unit

6

pF

12

pF

Test Condition

0V VIN VCC

0V VOUT VCC

E = VIL, G = VIH,

f = 6MHz

E = VCC ±0.2V,

RP = VCC ±0.2V

Program/Erase

Controller active

VPP/WP =

VIL or VIH

VPP/WP = VPP

VCC = 2.7V ±10%

Min

–0.5

0.7VCC

11.5

Max

Unit

±1

µA

±1

µA

10

mA

100

µA

20

mA

20

mA

0.8

V

VCC +0.3

V

12.5

V

VCC = 2.7V ±10%

IOL = 1.8mA

IOH = –100µA

15

mA

0.45

V

VCC –0.4

V

11.5

12.5

V

1.8

2.3

V

36/72

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