M29W640FT70N6E View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M29W640FT70N6E
STMicroelectronics
M29W640FT70N6E Datasheet PDF : 72 Pages
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9 Part Numbering
M29W640FT, M29W640FB
Table 23. CFI Query Identification String
Address
x16
x8
Data
Description
Value
10h
20h
0051h
“Q”
11h
22h
0052h Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
0002h Primary Algorithm Command Set and Control Interface ID code 16 bit AMD
14h
28h
0000h ID code defining a specific algorithm
Compatible
15h
2Ah
0040h
Address for Primary Algorithm extended Query table (see Table 26) P = 40h
16h
2Ch 0000h
17h
2Eh
0000h Alternate Vendor Command Set and Control Interface ID Code
18h
30h
0000h second vendor - specified algorithm supported
NA
19h
32h
0000h
Address for Alternate Algorithm extended Query table
NA
1Ah
34h
0000h
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 24. CFI Query System Interface Information
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
3Ah
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
3Ch
00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
000Ah Typical timeout per individual Block Erase = 2n ms
22h
44h
0000h Typical timeout for full Chip Erase = 2n ms
23h
46h
0004h Maximum timeout for byte/word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
256 µs
NA
58/72
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