M29W640FT70N6E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29W640FT70N6E

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

9 Part Numbering

M29W640FT, M29W640FB

Table 25. Device Geometry Definition

Address

x16

x8

Data

Description

27h

4Eh

0017h Device Size = 2n in number of bytes

28h

50h

0002h

Flash Device Interface Code description

29h

52h

0000h

2Ah

2Bh

54h

56h

0004h

0000h

Maximum number of bytes in multi-byte program or page = 2n

2Ch

58h

0002h

Number of Erase Block Regions. It specifies the number of

regions containing contiguous Erase Blocks of the same size.

2Dh

5Ah

0007h Region 1 Information

2Eh

5Ch

0000h Number of Erase Blocks of identical size = 0007h+1

2Fh

5Eh

0020h Region 1 Information

30h

60h

0000h Block size in Region 1 = 0020h * 256 byte

31h

62h

007Eh Region 2 Information

32h

64h

0000h Number of Erase Blocks of identical size= 007Eh+1

33h

66h

0000h Region 2 Information

34h

68h

0001h Block size in Region 2 = 0100h * 256 byte

35h

6Ah

0000h Region 3 Information

36h

6Ch

0000h Number of Erase Blocks of identical size=007Fh+1

37h

6Eh

0000h Region 3 Information

38h

70h

0000h Block size in Region 3 = 0000h * 256 byte

39h

72h

0000h Region 4 Information

3Ah

74h

0000h Number of Erase Blocks of Identical size=007Fh+1

3Bh

76h

0000h Region 4 Information

3Ch

78h

0000h Block size in Region 4 = 0000h * 256 byte

Value

8 MByte

x8, x16

Async.

16 Bytes

2

8

8Kbyte

127

64Kbyte

0

0

0

0

1. For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase Block Region 2

from address 008000h to 3FFFFFh.

For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase Block Region 2 from

address 3F8000h to 3FFFFFh.

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