M48Z2M1Y, M48Z2M1V
DC and AC parameters
Figure 10. Power down/up mode AC waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tFB
tWP
E
RECOGNIZED
tDR
tRB
DON'T CARE
tR
tER
RECOGNIZED
HIGH-Z
OUTPUTS
VALID
VALID
(PER CONTROL INPUT)
(PER CONTROL INPUT)
AI01031
t(s) Table 9. Power down/up AC characteristics
c Symbol
Parameter(1)
Min Max Unit
du tER
E recovery time
ro tF(2)
VPFD (max) to VPFD (min) VCC fall time
40
120 ms
300
µs
te P tFB(3)
VPFD (min) to VSO VCC fall time
M48Z2M1Y 10
M48Z2M1V 150
µs
µs
ole tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
bs tWP
Write protect time from VCC = VPFD
M48Z2M1Y 40
150
µs
M48Z2M1V 40
250
µs
- O 1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where
) noted).
t(s 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200 µs after VCC passes VPFD (min).
uc 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
rod Table 10. Power down/up trip points DC characteristics
P Symbol
Parameter(1)(2)
Min Typ Max Unit
leteVPFD Power-fail deselect voltage
M48Z2M1Y 4.2
4.3
4.5
V
M48Z2M1V 2.8
2.9
3.0
V
so M48Z2M1Y
3.0
V
Ob VSO Battery backup switchover voltage M48Z2M1V
2.45
V
tDR(3) Expected data retention time
10
YEARS
1. All voltages referenced to VSS.
2. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
3. At 25 °C; VCC = 0 V.
Doc ID 5135 Rev 6
15/20