M50FLW040AN5T View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M50FLW040AN5T

4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

STMicroelectronics 

M50FLW040A, M50FLW040B

PROGRAM AND ERASE TIMES

The Program and Erase times are shown in Table

18..

Table 18. Program and Erase Times

Parameter

Interface

Test Condition

Byte Program

Double Byte Program

FWH

VPP = 12V ± 5%

Quadruple Byte Program

A/A Multiplexed

FWH

VPP = 12V ± 5%

Block Program

Sector Erase (4 KBytes)(2)

Block Erase (64 KBytes)

Chip Erase

A/A Multiplexed

Program/Erase Suspend to Program pause(2)

VPP = 12V ± 5%

VPP = VCC

VPP = 12V ± 5%

VPP = VCC

VPP = 12V ± 5%

VPP = VCC

VPP = 12V ± 5%

Program/Erase Suspend to Block Erase/

Sector Erase pause(2)

Note: 1. TA = 25°C, VCC = 3.3V

2. Sampled only, not 100% tested.

3. Time to program two Bytes.

4. Time to program four Bytes.

5. Time obtained executing the Quadruple Byte Program command.

Min Typ(1) Max Unit

10 200 µs

10(3) 200 µs

10(4) 200 µs

0.1(5)

5

s

0.4

5

0.4

4

s

0.5

5

0.75 8

s

1

10

5

s

5

µs

30 µs

26/52

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