M58BW016DB(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58BW016DB
(Rev.:2003)

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

Table 15. DC Characteristics

Symbol

Parameter

ILI Input Leakage Current

ILO Output Leakage Current

IDD Supply Current (Random Read)

IDDB Supply Current (Burst Read)

Supply Current (Standby)

IDD1

Supply Current (Auto Low-Power)

IDD2 Supply Current (Reset/Power-down)

IDD3

Supply Current (Program or Erase,

Set Lock Bit, Erase Lock Bit)

IDD4

Supply Current

(Erase/Program Suspend)

IPP Program Current (Read or Standby)

IPP1 Program Current (Read or Standby)

IPP2 Program Current (Power-down)

Program Current (Program)

IPP3 Program in Progress

IPP4

Program Current (Erase)

Erase in Progress

VIL

VIH

VIH

VOL

VOH

VPP1

VPPH

VLKO

VPPLK

Input Low Voltage

Input High Voltage (for DQ lines)

Input High Voltage (for Input only

lines)

Output Low Voltage

Output High Voltage CMOS

Program Voltage

(Program or Erase operations)

Program Voltage

(Program or Erase operations)

VDD Supply Voltage (Erase and

Program lockout)

VPP Supply Voltage (Erase and

Program lockout)

Test Condition

0V≤VIN ≤VDDQ

0V≤VOUT ≤VDDQ

E = VIL, G = VIH, fadd = 6MHz

E = VIL, G = VIH, fclock =

56MHz

E = RP = VDD ± 0.2V

E = VSS ± 0.2V,

RP = VDD ± 0.2V

RP = VSS ± 0.2V

Program, Block Erase in

progress

E = VIH

VPP ≥ VPP1

VPP ≤VPP1

RP = VIL

VPP = VPP1

VPP = VPPH

VPP = VPP1

VPP = VPPH

IOL = 100µA

IOH = –100µA

Min

Max

±1

±5

20

30

60

60

60

30

40

± 30

± 30

±5

200

20

200

20

–0.5

0.8VDDQIN

0.2VDDQIN

VDDQ +0.3

0.8VDDQIN

3.6

0.1

VDDQ –0.1

2.7

3.6

11.4

12.6

2.2

11.4

Unit

µA

µA

mA

mA

µA

µA

µA

mA

µA

µA

µA

µA

µA

mA

µA

mA

V

V

V

V

V

V

V

V

V

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