M58BW016BT100T3(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58BW016BT100T3
(Rev.:2003)

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

Figure 16. Synchronous Burst Read - Continuous - Valid Data Ready Output

K

Output (1) V

V

R

V

tRLKH

V

V

(2)

AI03649

Note: Valid Data Ready = Valid Low during valid clock edge

1. V= Valid output.

2. R is an open drain output with an internal pull up resistor of 1MΩ. The internal timing of R follows DQ. An external resistor, typically

300kΩ. for a single memory on the R bus, should be used to give the data valid set up time required to recognize that valid data is

available on the next valid clock edge.

Figure 17. Synchronous Burst Read - Burst Address Advance

K

ADD

L

ADD

G

B

VALID

Q0

tGLQV

tBLKH

Q1

Q2

tBHKH

AI03650

41/63

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