M58BW016BT100T3(2003) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58BW016BT100T3
(Rev.:2003)

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

DC AND AC PARAMETERS

This section summarizes the operating and mea-

surement conditions, and the DC and AC charac-

teristics of the device. The parameters in the DC

and AC characteristics Tables that follow, are de-

rived from tests performed under the Measure-

ment Conditions summarized in Table 13,

Operating and AC Measurement Conditions. De-

signers should check that the operating conditions

in their circuit match the measurement conditions

when relying on the quoted parameters.

Table 13. Operating and AC Measurement Conditions

Parameter

Supply Voltage (VDD)

Input/Output Supply Voltage (VDDQ)

Ambient Temperature (TA)

Load Capacitance (CL)

Clock Rise and Fall Times

Input Rise and Fall Times

Input Pulses Voltages

Input and Output Timing Ref. Voltages

Grade 6

Grade 3

Value

Min

Max

2.7

3.6

2.4

VDD

–40

90

–40

125

60

4

4

0 to VDDQ

VDDQ/2

Units

V

V

°C

°C

pF

ns

ns

V

V

Figure 7. AC Measurement Input Output

Waveform

VDDQ

VDDQIN

0V

Note: VDD = VDDQ.

VDDQ/2

VDDQIN/2

AI04153

Figure 8. AC Measurement Load Circuit

1.3V

1N914

DEVICE

UNDER

TEST

3.3kΩ

CL

OUT

Table 14. Device Capacitance

Symbol

Parameter

CIN

Input Capacitance

COUT

Output Capacitance

Note: 1. TA = 25°C, f = 1 MHz

2. Sampled only, not 100% tested.

CL includes JIG capacitance

AI04154

Test Condition

VIN = 0V

VOUT = 0V

Typ

Max

Unit

6

8

pF

8

12

pF

31/63

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