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M95160-FDW6P(2014) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M95160-FDW6P
(Rev.:2014)
STMICROELECTRONICS
STMicroelectronics 
M95160-FDW6P Datasheet PDF : 47 Pages
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DC and AC parameters
M95160 M95160-W M95160-R M95160-DF
Table 15. DC characteristics (M95160-W, device grade 6)
Symbol
Parameter
Test conditions in addition to those
defined in Table 8 and Table 11
Min.
Max. Unit
ILI
Input leakage
current
VIN = VSS or VCC
-
±2
µA
ILO
Output leakage
current
S = VCC, VOUT = VSS or VCC
-
±2
µA
ICC
Supply current
(Read)
ICC0(3)
Supply current
(Write)
VCC = 2.5 V, fC = 5 MHz,
-
C = 0.1 VCC/0.9 VCC, Q = open
VCC = 2.5 V, fC = 10 MHz,
-
C = 0.1 VCC/0.9 VCC, Q = open
VCC = 5.5 V, fC = 20 MHz,
-
C = 0.1 VCC/0.9 VCC, Q = open
During tW, S = VCC, 2.5 V < VCC < 5.5 V -
2
2 (1)
mA
5 (2)
5
mA
ICC1
VIL
VIH
VOL
VOH
VRES(3)
Supply current
(Standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Internal reset
threshold voltage
S = VCC, VCC = 5.5 V,
VIN = VSS or VCC,
S = VCC, VCC = 2.5 V,
VIN = VSS or VCC,
-
-
IOL = 1.5 mA, VCC = 2.5 V
VCC = 2.5 V and IOH = 0.4 mA or
VCC = 5.5 V and IOH = 2 mA
-
-
3
µA
-
2
–0.45 0.3 VCC V
0.7 VCC VCC+1 V
-
0.4
V
0.8 VCC
-
V
1.0(4) 1.65(5) V
1. 5 mA for the devices identified with process letter G or S.
2. Only for the devices identified by process letter K.
3. Characterized only, not tested in production.
4. 0.5 V with the device identified by process letter K.
5. 1.5 V with the device identified by process letter K.
34/47
DocID022580 Rev 5

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