M95160-FDW6P(2014) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M95160-FDW6P
(Rev.:2014)

16-Kbit serial SPI bus EEPROM with high-speed clock

STMicroelectronics 

M95160 M95160-W M95160-R M95160-DF

DC and AC parameters

Table 16. DC characteristics (M95160-R or M95160-DF, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in in Table 9 or Table 10 and

Table 11(1)

Min.

Max. Unit

ILI

Input leakage current

VIN = VSS or VCC

-

±2

µA

ILO Output leakage current S = VCC, voltage applied on Q = VSS or VCC

-

±2

µA

ICC Supply current (Read)

ICC0(3) Supply current (Write)

VCC = 1.8 V or 1.7 V, fC = 5 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

VCC = 1.8 V or 1.7 V, during tW, S = VCC

-

2(2)

mA

-

5

mA

ICC1

Supply current (Standby)

VCC = 1.8 V or 1.7 V, S = VCC, VIN = VSS or

VCC

-

1

µA

VIL Input low voltage

VCC < 2.5 V

–0.45 0.25 VCC V

VIH Input high voltage

VCC < 2.5 V

0.75 VCC VCC+1

V

VOL Output low voltage

IOL = 0.15 mA, VCC = 1.8 V or 1.7 V

-

0.3

V

VOH Output high voltage

IOH = –0.1 mA, VCC = 1.8 V or 1.7 V

0.8 VCC

-

V

VRES(3)

Internal reset threshold

voltage

-

1.0(4)

1.65(5)

V

1. If the application uses the M95160-R or M95160-DF devices with 2.5 V ≤VCC ≤5.5 V and -40 °C ≤TA ≤+85 °C, please refer to

Table 15: DC characteristics (M95160-W, device grade 6), rather than to the above table.

2. 2 mA at 3.5 MHz for the devices identified with process letters G or S.

3. Characterized only, not tested in production.

4. 0.5 V with the device identified by process letter K.

5. 1.5 V with the device identified by process letter K.

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