MCF51QM32VFM(2012) View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MCF51QM32VFM
(Rev.:2012)

Embedded - Microcontrollers, Integrated Circuits (ICs)

Freescale Semiconductor 

Memories and memory interfaces

The bytes not assigned to data flash via the FlexNVM partition code are used by the

FTFL to obtain an effective endurance increase for the EEPROM data. The built-in

EEPROM record management system raises the number of program/erase cycles that can

be attained prior to device wear-out by cycling the EEPROM data through a larger

EEPROM NVM storage space.

While different partitions of the FlexNVM are available, the intention is that a single

choice for the FlexNVM partition code and EEPROM data set size is used throughout the

entire lifetime of a given application. The EEPROM endurance equation and graph

shown below assume that only one configuration is ever used.

Writes_FlexRAM =

EEPROM – 2 × EEESIZE

EEESIZE

× Write_efficiency × nnvmcycd

where

• Writes_FlexRAM — minimum number of writes to each FlexRAM location

• EEPROM — allocated FlexNVM based on DEPART; entered with Program

Partition command

• EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition

command

• Write_efficiency —

• 0.25 for 8-bit writes to FlexRAM

• 0.50 for 16-bit or 32-bit writes to FlexRAM

• nnvmcycd — data flash cycling endurance

MCF51QM128 Data Sheet, Rev. 6, 01/2012.

Freescale Semiconductor, Inc.

31

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