M58WR064ET, M58WR064EB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58WR064E the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Condition
Typical
Min
Typ
after
100k W/E
Max Unit
Cycles
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
Not Preprogrammed
0.8
3
1.1
4
s
4
s
Preprogrammed
3
s
Bank (4Mbit) Erase
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
10
10
100 µs
Program Suspend Latency
5
10
µs
Erase Suspend Latency
5
20
µs
Main Blocks
Program/Erase Cycles (per Block)
Parameter Blocks
100,000
100,000
cycles
cycles
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory
Program)(5)
t.b.a.(4)
s
4Mbit Program
Quadruple Word(5)
510
ms
Word/ Double Word/ Quadruple Word Program(3, 5)
8
100 µs
Parameter Block (4 KWord)
Quadruple Word(5)
8
ms
Program(3)
Word
32
ms
Quadruple Word(5)
64
ms
Main Block (32 KWord) Program(3)
Word
256
ms
Main Blocks
Program/Erase Cycles (per Block)
Parameter Blocks
1000 cycles
2500 cycles
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2.2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
5. Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
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