M58WR064EB80ZB6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58WR064EB80ZB6

64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064ET, M58WR064EB

Table 18. DC Characteristics - Currents

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI Input Leakage Current

0V ≤ VIN ≤ VDDQ

±1

µA

ILO Output Leakage Current

0V ≤ VOUT ≤ VDDQ

±1

µA

Supply Current

Asynchronous Read (f=6MHz)

E = VIL, G = VIH

3

6

mA

Supply Current

Synchronous Read (f=40MHz)

IDD1

4 Word

8 Word

Continuous

6

13

mA

8

14

mA

6

10

mA

Supply Current

Synchronous Read (f=54MHz)

4 Word

8 Word

Continuous

7

16

mA

10

18

mA

13

25

mA

IDD2

Supply Current

(Reset)

RP = VSS ± 0.2V

10

50

µA

IDD3 Supply Current (Standby)

E = VDD ± 0.2V

10

50

µA

IDD4

Supply Current (Automatic

Standby)

E = VIL, G = VIH

10

50

µA

IDD5 (1)

Supply Current (Program)

Supply Current (Erase)

VPP = VPPH

VPP = VDD

VPP = VPPH

VPP = VDD

8

15

mA

10

20

mA

8

15

mA

10

20

mA

IDD6 (1,2)

Supply Current

(Dual Operations)

Program/Erase in one

Bank, Asynchronous

Read in another Bank

Program/Erase in one

Bank, Synchronous

Read in another Bank

13

26

mA

16

30

mA

IDD7(1)

Supply Current Program/ Erase

Suspended (Standby)

E = VDD ± 0.2V

10

50

µA

IPP1(1)

VPP Supply Current (Program)

VPP Supply Current (Erase)

VPP = VPPH

VPP = VDD

VPP = VPPH

VPP = VDD

2

5

mA

0.2

5

µA

2

5

mA

0.2

5

µA

IPP2 VPP Supply Current (Read)

VPP ≤ VDD

0.2

5

µA

IPP3(1) VPP Supply Current (Standby)

VPP ≤ VDD

0.2

5

µA

Note: 1. Sampled only, not 100% tested.

2. VDD Dual Operation current is the sum of read and program or erase currents.

37/82

Share Link: