NAND256R4A2BZB6T View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

NAND256R4A2BZB6T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Table 19. DC Characteristics, 3V Devices

Symbol

Parameter

Test Conditions

Min

IDD1

IDD2

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

-

Operating

Current

Program

-

-

IDD3

Erase

-

-

Stand-by Current (TTL),

128Mb, 256Mb, 512Mb devices

-

IDD4

E=VIH, WP=0V/VDD

Stand-by Current (TTL)

512Mb and 1Gb Dual Die devices

-

Stand-By Current (CMOS)

128Mb, 256Mb, 512Mb devices

IDD5

Stand-By Current (CMOS)

512Mb and 1Gb Dual Die devices

E=VDD-0.2,

WP=0/VDD

-

-

ILI

Input Leakage Current

VIN= 0 to VDDmax

-

ILO

Output Leakage Current

VOUT= 0 to VDDmax

-

VIH

Input High Voltage

-

2.0

VIL

Input Low Voltage

-

−0.3

VOH

Output High Voltage Level

IOH = −400µA

2.4

VOL

Output Low Voltage Level

IOL = 2.1mA

-

IOL (RB)

Output Low Current (RB)

VOL = 0.4V

8

VLKO

VDD Supply Voltage (Erase and

Program lockout)

-

-

Typ

Max Unit

10

20

mA

10

20

mA

10

20

mA

-

1

mA

-

2

mA

10

50

µA

20

100

µA

-

±10

µA

-

±10

µA

-

VDD+0.3 V

-

0.8

V

-

-

V

-

0.4

V

10

mA

-

2.5

V

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