Numonyx™ Wireless Flash Memory (W18)
Table 12: DC Voltage Characteristics (Sheet 2 of 2)
Symbol
Parameter
VCCQ= 1.8 V
32/64-Mbit
128-Mbit
Unit
Test Condition Notes
Min
Max
Min
Max
VOH
Output High
VCCQ – 0.1
-
VCCQ – 0.1
-
VCC = VCCMin
V
VCCQ = VCCQMin
IOH = –100 µA
VPPLK
VPP Lock-Out
-
0.4
-
0.4
V
3
VCC Lock (130nm)
1.0
-
1.0
-
V
VLKO
4
VCC Lock (90nm)
0.7
-
-
-
V
VILKOQ
VCCQ Lock
0.9
-
0.9
-
V
Notes:
1.
VCCQ = 1.35 V - 1.8V is available on 130 nm devices only.
2.
VIL can undershoot to –1.0 V for durations of 2 ns or less and VIH can overshoot to VCCQ+1.0 V for durations of 2 ns or
less.
3.
VPP <= VPPLK inhibits erase and program operations. Don’t use VPPL and VPPH outside their valid ranges.
4.
Block erases, programming and lock-bit configurations are inhibited when VCC<VLKO, and not guaranteed in the range
between VLKOMIN and VCCMIN, and above VCCMAX.
November 2007
Order Number: 290701-18
Datasheet
25