PIC16C8X
Applicable Devices 83 R83 84 84A R84
11.4 DC CHARACTERISTICS:
PIC16C84-04 (Commercial, Industrial)
PIC16C84-10 (Commercial, Industrial)
PIC16LC84-04 (Commercial, Industrial)
DC CHARACTERISTICS
Parameter
No.
Sym
Characteristic
Capacitive Loading Specs
on Output Pins
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
0°C
≤ TA ≤ +85°C for industrial and
≤ TA ≤ +70°C for commercial
Operating voltage VDD range as described in DC spec Section 11-1
and Section 11-3.
Min Typ† Max Units
Conditions
D100 COSC2 OSC2/CLKOUT pin
—
—
15 pF In XT, HS and LP modes when
external clock is used to drive
OSC1.
D101
CIO All I/O pins and OSC2
(RC mode)
—
—
50 pF
Data EEPROM Memory
D120
D121
ED Endurance
VDRW VDD for read/write
100,000 1,000,000 —
VMIN
—
6.0
E/W
V VMIN = Minimum operating
voltage
D122 TDEW Erase/Write cycle time
—
10
— ms Note1
Program EEPROM Memory
D130 EP Endurance
100
—
— E/W
D131 VPR VDD for read
VMIN
—
6.0 V VMIN = Minimum operating
voltage
D132 VPEW VDD for erase/write
4.5
—
5.5 V
D133 TPEW Erase/Write cycle time
—
10
— ms Note1
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: The user should use interrupts or poll the EEIF or WR bits to ensure the write cycle has completed.
© 1995 Microchip Technology Inc.
DS30081F-page 75