PIC16CE624T-04SS View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16CE624T-04SS

OTP 8-Bit CMOS MCU with EEPROM Data Memory

Microchip Technology 

PIC16CE62X

13.1 DC CHARACTERISTICS:

PIC16CE62X-04 (Commercial, Industrial, Extended)

PIC16CE62X-20 (Commercial, Industrial, Extended)

DC CHARACTERISTICS

Param

No.

Sym

Characteristic

Standard Operating Conditions (unless otherwise stated)

Operating temperature

–40°C ≤ TA ≤ +85°C for industrial and

0°C ≤ TA ≤ +70°C for commercial and

–40°C ≤ TA ≤ +125°C for extended

Min Typ† Max Units

Conditions

D001 VDD

Supply Voltage

3.0 – 5.5 V See Figure 13-1 through Figure 13-3

D002 VDR

RAM Data Retention

Voltage (Note 1)

– 1.5* – V Device in SLEEP mode

D003 VPOR

VDD start voltage to

ensure Power-on Reset

– VSS – V See section on power-on reset for details

D004 SVDD

VDD rise rate to ensure

Power-on Reset

0.05* – – V/ms See section on power-on reset for details

D005 VBOR

Brown-out Detect Voltage

3.7 4.0 4.35 V BOREN configuration bit is cleared

D010 IDD

Supply Current (Note 2, 4)

– 1.2 2.0 mA FOSC = 4 MHz, VDD = 5.5V, WDT disabled,

XT osc mode, (Note 4)*

– 0.4 1.2 mA FOSC = 4 MHz, VDD = 3.0V, WDT disabled,

XT osc mode, (Note 4)

– 1.0 2.0 mA FOSC = 10 MHz, VDD = 3.0V, WDT disabled,

HS osc mode, (Note 6)

– 4.0 6.0 mA FOSC = 20 MHz, VDD = 4.5V, WDT disabled,

HS osc mode

– 4.0 7.0 mA FOSC = 20 MHz, VDD = 5.5V, WDT disabled*,

HS osc mode

–

35 70 µA FOSC = 32 kHz, VDD = 3.0V, WDT disabled,

LP osc mode

D020 IPD

Power Down Current (Note 3)

–

– 2.2 µA VDD = 3.0V

–

– 5.0 µA VDD = 4.5V*

–

– 9.0 µA VDD = 5.5V

–

– 15 µA VDD = 5.5V Extended

D022 ∆IWDT

D022A ∆IBOR

D023 ∆ICOMP

D023A ∆IVREF

WDT Current (Note 5)

Brown-out Reset Current (Note 5)

Comparator Current for each

Comparator (Note 5)

VREF Current (Note 5)

– 6.0 10 µA VDD = 4.0V

12 µA (125°C)

–

75 125 µA BOD enabled, VDD = 5.0V

–

30 60 µA VDD = 4.0V

–

80 135 µA VDD = 4.0V

∆IEE Write Operating Current

∆IEE Read Operating Current

∆IEE

Standby Current

∆IEE

Standby Current

–

3 mA VCC = 5.5V, SCL = 400 kHz

–

1 mA

–

30 µA VCC = 3.0V, EE VDD = VCC

–

100 µA VCC = 3.0V, EE VDD = VCC

1A

FOSC

LP Oscillator Operating Frequency 0

RC Oscillator Operating Frequency 0

XT Oscillator Operating Frequency 0

HS Oscillator Operating Frequency 0

– 200 kHz All temperatures

– 4 MHz All temperatures

– 4 MHz All temperatures

– 20 MHz All temperatures

*

†

Note 1:

2:

3:

4:

5:

6:

These parameters are characterized but not tested.

Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are not

tested.

This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the

part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the for-

mula Ir = VDD/2Rext (mA) with Rext in kΩ.

The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base

IDD or IPD measurement.

Commercial temperature range only.

DS40182C-page 86

© 1999 Microchip Technology Inc.

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