PIC16CE62X
13.2 DC CHARACTERISTICS:
PIC16LCE62X-04 (Commercial, Industrial)
DC CHARACTERISTICS
Param
No.
Sym
Characteristic
Standard Operating Conditions (unless otherwise stated)
Operating temperature
–40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
–40°C ≤ TA ≤ +125°C for extended
Min Typ† Max Units
Conditions
D001 VDD
Supply Voltage
2.5
– 5.5 V See Figure 13-1 through Figure 13-3
D002 VDR
RAM Data Retention
Voltage (Note 1)
–
1.5* –
V Device in SLEEP mode
D003 VPOR
VDD start voltage to
ensure Power-on Reset
–
VSS –
V See section on power-on reset for details
D004 SVDD
VDD rise rate to ensure
Power-on Reset
.05* –
– V/ms See section on power-on reset for details
D005 VBOR
Brown-out Detect Voltage
3.7 4.0 4.35 V BOREN configuration bit is cleared
D010 IDD
Supply Current (Note 2)
–
1.2 2.0 mA FOSC = 4 MHz, VDD = 5.5V, WDT disabled,
XT osc mode, (Note 4)*
–
– 1.1 mA FOSC = 4 MHz, VDD = 2.5V, WDT disabled,
XT osc mode, (Note 4)
–
35 70 µA FOSC = 32 kHz, VDD = 2.5V, WDT disabled,
LP osc mode
D020 IPD
Power Down Current (Note 3)
–
– 2.0 µA VDD = 2.5V
–
– 2.2 µA VDD = 3.0V*
–
– 9.0 µA VDD = 5.5V
–
–
15 µA VDD = 5.5V Extended
D022 ∆IWDT
D022A ∆IBOR
D023 ∆ICOMP
D023A ∆IVREF
WDT Current (Note 5)
–
6.0 10 µA VDD=4.0V
12 µA (125°C)
Brown-out Reset Current
–
75 125 µA BOD enabled, VDD = 5.0V
(Note 5)
Comparator Current for each
–
30 60 µA VDD = 4.0V
Comparator (Note 5)
VREF Current (Note 5)
–
80 135 µA VDD = 4.0V
∆IEE Write
∆IEE Read
∆IEE
∆IEE
Operating Current
Operating Current
Standby Current
Standby Current
–
3 mA VCC = 5.5V, SCL = 400 kHz
–
1 mA
–
30 µA VCC = 3.0V, EE VDD = VCC
–
100 µA VCC = 3.0V, EE VDD = VCC
1A
FOSC
LP Oscillator Operating Frequency 0
— 200 kHz All temperatures
RC Oscillator Operating Frequency 0
—
4 MHz All temperatures
XT Oscillator Operating Frequency 0
—
4 MHz All temperatures
HS Oscillator Operating Frequency 0
— 20 MHz All temperatures
*
†
Note 1:
2:
3:
4:
5:
6:
These parameters are characterized but not tested.
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are not
tested.
This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the for-
mula Ir = VDD/2Rext (mA) with Rext in kΩ.
The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base
IDD or IPD measurement.
Commercial temperature range only.
© 1999 Microchip Technology Inc.
DS40182C-page 87