PIC18LF2431-I/ML View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18LF2431-I/ML

28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D

Microchip Technology 

PIC18F2331/2431/4331/4431

TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C  TA  +85°C for industrial

-40°C TA  +125°C for extended

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

Internal Program Memory

Programming Specifications(1)

D110 VPP Voltage on MCLR/VPP pin

9.00

— 13.25 V (Note 3)

D112

D113

IPP

IDDP

Current into MCLR/VPP pin

Supply Current during

Programming

—

—

300 A

—

—

1

mA

D120

D121

ED

VDRW

Data EEPROM Memory

Byte Endurance

VDD for Read/Write

D122 TDEW Erase/Write Cycle Time

D123 TRETD Characteristic Retention

D124 TREF Number of Total Erase/Write

Cycles before Refresh(2)

100K 1M

VMIN

—

—

4

40

—

1M

10M

— E/W -40C to +85C

5.5

V Using EECON to read/write

VMIN = Minimum operating

voltage

—

ms

— Year Provided no other

specifications are violated

— E/W -40°C to +85°C

Program Flash Memory

D130 EP Cell Endurance

10K 100K

—

E/W -40C to +85C

D131 VPR VDD for Read

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D132 VIE VDD for Block Erase

4.5

—

5.5

V Using ICSP™ port

D132A VIW VDD for Externally Timed Erase

4.5

—

5.5

V Using ICSP port

or Write

D132B VPEW VDD for Self-Timed Write

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D133 TIE ICSP™ Block Erase Cycle Time —

4

—

ms VDD > 4.5V

D133A TIW ICSP Erase or Write Cycle Time

1

(externally timed)

—

—

ms VDD > 4.5V

D133A TIW Self-Timed Write Cycle Time

—

2

—

ms

D134 TRETD Characteristic Retention

40

100

— Year Provided no other

specifications are violated

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: These specifications are for programming the on-chip program memory through the use of table write

instructions.

2: Refer to Section 7.9 “Using the Data EEPROM” for a more detailed discussion on data EEPROM

endurance.

3: Required only if Single-Supply Programming is disabled.

 2010 Microchip Technology Inc.

DS39616D-page 341

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