PIC18LF8410-I/PTQTP View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC18LF8410-I/PTQTP

64/80-Pin Flash Microcontrollers with nanoWatt Technology

Microchip Technology 

PIC18F6310/6410/8310/8410

TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS

DC Characteristics

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for industrial

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

Program Flash Memory

D110 VPP Voltage on MCLR/VPP pin

10.0

—

12.0 V

D113 IDDP Supply Current during

Programming

—

—

1

mA

D130 EP Cell Endurance

—

1K

— E/W -40°C to +85°C

D131 VPR VDD for Read

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D132 VIE VDD for Block Erase

4.5

—

5.5

V Using ICSP port

D132A VIW VDD for Externally Timed Erase 4.5

—

5.5

V Using ICSP port

or Write

D132B VPEW VDD for Self-timed Write

VMIN

—

5.5

V VMIN = Minimum operating

voltage

D133 TIE ICSP™ Block Erase Cycle Time —

4

—

ms VDD > 4.5V

D133A TIW ICSP Erase or Write Cycle Time 2

(externally timed)

—

—

ms VDD > 4.5V

D133A TIW Self-timed Write Cycle Time

—

2

—

ms

D134 TRETD Characteristic Retention

40

100

— Year Provided no other

specifications are violated

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

 2004 Microchip Technology Inc.

Preliminary

DS39635A-page 355

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