Si3230
Component
R28
R29
Table 16. Component Value Selection for Si3230
Value
1/10 W, 1% resistor
For VDD = 3.3 V: 26.1 kΩ
For VDD = 5.0 V: 37.4 kΩ
1/10 W, 1% resistor
For VCLAMP = 80 V: 541 kΩ
For VCLAMP = 85 V: 574 kΩ
For VCLAMP = 100 V: 676 kΩ
Comments
R28 = (VDD + VBE)/148 µA
where VBE is the nominal VBE for Q9
R29 = VCLAMP/148 µA
where VCLAMP is the clamping voltage for VBAT
Table 17. Component Value Selection Examples for DC-DC Converter
VDC
Maximum Ringing Load/Loop Resistance
L1
R17
R18 R19, R20
5V
3 REN/117 Ω
33 µH
100 Ω
0.12 Ω 16.5 kΩ
12 V
5 REN/117 Ω
150 µH
162 Ω
0.56 Ω 56.2kΩ
24 V
5 REN/117 Ω
560 µH 274 Ω
2.2 Ω
121 kΩ
Note: There are other system and software conditions that influence component value selection. Please refer to “AN45:
“Design Guide for the Si3210/15/16 DC-DC Converter” for detailed guidance.
Table 18. Component Value Selection Examples
for Si3230M MOSFET/Transformer DC-DC Converter
VDC
Maximum Ringing Load/Loop Resistance Transformer Ratio
R18
R19, R20
3.3 V
3 REN/117 Ω
1:2
0.06 Ω
7.15 Ω
5.0 V
5 REN/117 Ω
1:2
0.10 Ω
16.5 Ω
12 V
5 REN/117 Ω
1:3
0.6 Ω
56.2 Ω
24
5 REN/117 Ω
1:4
2.1 Ω
121 Ω
Note: There are other system and software conditions that influence component value selection. Please refer to “AN45:
“Design Guide for the Si3210/15/16 DC-DC Converter” for detailed guidance.
Preliminary Rev. 0.96
17