SST34HF1641C-70-4E-L1PE View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

Manufacturer

SST34HF1641C-70-4E-L1PE

16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory

SST34HF1621C / SST34HF1641C

DC Characteristics

Data Sheet

TABLE 9: DC Operating Characteristics (VDD = VDDF and VDDS = 2.7-3.3V)

Limits

Symbol Parameter

Min

IDD1

Active VDD Current

ISB

IRT

ILI

ILIW

ILO

VIL

VILC

VIH

VIHC

VOLF

VOHF

VOLS

VOHS

Read

Flash

SRAM

Concurrent Operation

Write2

Flash

SRAM

Standby VDD Current

Reset VDD Current

Input Leakage Current

Input Leakage Current

on WP# pin and RST# pin

Output Leakage Current

Input Low Voltage

Input Low Voltage (CMOS)

Input High Voltage

Input High Voltage (CMOS)

Flash Output Low Voltage

Flash Output High Voltage

SRAM Output Low Voltage

SRAM Output High Voltage

0.7 VDD

VDD-0.3

VDD-0.2

2.2

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 22)

2. IDD active while Erase or Program is in progress.

Max

35

30

60

40

30

30

30

1

10

10

0.8

0.3

0.2

0.4

Units

mA

mA

mA

mA

mA

µA

µA

µA

µA

µA

V

V

V

V

V

V

V

V

Test Conditions

Address input = VILT/VIHT, at f=5 MHz,

VDD=VDD Max, all DQs open

OE#=VIL, WE#=VIH

BEF#=VIL, BES1#=VIH, or BES2=VIL

BEF#=VIH, BES1#=VIL , BES2=VIH

BEF#=VIH, BES1#=VIL , BES2=VIH

WE#=VIL

BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH

BEF#=VIH, BES1#=VIL , BES2=VIH

VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC

RST#=GND

VIN=GND to VDD, VDD=VDD Max

WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

VOUT=GND to VDD, VDD=VDD Max

VDD=VDD Min

VDD=VDD Max

VDD=VDD Max

VDD=VDD Max

IOL=100 µA, VDD=VDD Min

IOH=-100 µA, VDD=VDD Min

IOL =1 mA, VDD=VDD Min

IOH =-500 µA, VDD=VDD Min

T9.1 1252

TABLE 10: Recommended System Power-up Timings

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Write Operation

100

µs

T10.0 1252

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

20 pF

CIN1

Input Capacitance

VIN = 0V

16 pF

T11.0 1252

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2006 Silicon Storage Technology, Inc.

17

S71252-03-000

8/06

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