ST10F276 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

ST10F276

16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM

STMicroelectronics 

ST10F276

Internal Flash memory

4.2.3

Note:

Table 5. Control register interface

Bank

Description

FCR1-0 Flash control registers 1-0

FDR1-0 Flash data registers 1-0

FAR

Flash address registers

FER

Flash error register

FNVWPXR

Flash non volatile protection

X register

FNVWPIR

Flash non volatile protection

I register

FNVAPR0

Flash non volatile access

protection register 0

FNVAPR1

Flash non volatile access

protection register 1

XFICR

XFlash interface control register

Addresses

0x000E 0000 - 0x000E 0007

0x000E 0008 - 0x000E 000F

0x000E 0010 - 0x000E 0013

0x000E 0014 - 0x000E 0015

Size

ST10

bus size

8 byte

8 byte

4 byte

2 byte

0x000E DFB0 - 0x000E DFB3

0x000E DFB4 - 0x000E DFB7

4 byte

4 byte

16-bit

(X-BUS)

0x000E DFB8 - 0x000E DFB9 2 byte

0x000E DFBC - 0x000E DFBF 4 byte

0x000E E000 - 0x000E E001 2 byte

Low power mode

The Flash modules are automatically switched off executing PWRDN instruction. The

consumption is drastically reduced, but exiting this state can require a long time (tPD).

Recovery time from Power Down mode for the Flash modules is anyway shorter than the

main oscillator start-up time. To avoid any problem in restarting to fetch code from the Flash,

it is important to size properly the external circuit on RPD pin.

Power-off Flash mode is entered only at the end of the eventually running Flash write

operation.

4.3

Note:

Write operation

The Flash modules have one single register interface mapped in the memory space of the

XFlash module (0x0E 0000 to 0x0E 0013). All the operations are enabled through four 16-bit

control registers: Flash Control Register 1-0 High/Low (FCR1H/L-FCR0H/L). Eight other 16-

bit registers are used to store Flash Address and Data for Program operations (FARH/L and

FDR1H/L-FDR0H/L) and Write Operation Error flags (FERH/L). All registers are accessible

with 8 and 16-bit instructions (since mapped on ST10 XBUS).

Before accessing the XFlash module (and consequently also the Flash register to be used

for program/erasing operations), bit XFLASHEN in XPERCON register and bit XPEN in

SYSCON register shall be set.

The 4 Banks have their own dedicated sense amplifiers, so that any Bank can be read while

any other Bank is written. However simultaneous write operations (“write” means either

Program or Erase) on different Banks are forbidden: when there is a write operation on

going (Program or Erase) anywhere in the Flash, no other write operation can be performed.

During a Flash write operation any attempt to read the bank under modification will output

invalid data (software trap 009Bh). This means that the Flash Bank is not fetchable when a

write operation is active: the write operation commands must be executed from another

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