STA335BWS View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STA335BWS Datasheet PDF : 68 Pages
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STA335BWS
Electrical specifications
3.3
Electrical specifications - digital section
Table 5. Electrical specifications - digital section
Symbol
Parameter
Conditions
Min
Typ
Max
Iil
Low level input current without pull device Vi = 0 V
-10
10
Iih
High level input current without pull device
Vi = VDD_DIG =
3.6 V
-10
10
Vil
Low level input voltage
Vih
High level input voltage
Vol
Low level output voltage
Voh
High level output voltage
Ipu
Pull current
Rpu
Equivalent pull resistance
Iol = 2 mA
Ioh = 2 mA
0.8*VDD_DIG
0.8*VDD_DIG
-25
66
50
0.2*VDD_DIG
0.4*VDD_DIG
125
Unit
µA
µA
V
V
V
V
µA
KΩ
3.4
Electrical specifications - power section
The specifications given in this section are with the operating conditions VCC = 18 V, f =
1 kHz, fsw = 384 kHz, Tamb = 25° C, RL = 8 Ω, unless otherwise specified.
Table 6.
Symbol
Electrical specifications - power section
Parameter
Conditions
Min Typ Max Unit
Output power BTL
Po
Output power SE
VCC = 18 V
VCC = 18V
RdsON
gP
gN
Idss
gP
gN
Idss
ILDT
Power Pchannel/Nchannel
MOSFET (total bridge)
Power Pchannel RdsON
matching
Power Nchannel RdsON
matching
Power Pchannel/Nchannel
leakage ldss
Power Pchannel RdsON
Matching
Power Nchannel RdsON
Matching
Power Pchannel/Nchannel
leakage
Low current dead time (static)
ld = 1.5 A
ld = 1.5 A
ld = 1.5 A
VCC = 20 V
ld = 1.5 A
ld = 1.5 A
VCC = 20 V
Resistive load(1)
THD = 1%
THD = 10%
THD = 1%
THD = 10%
95
95
95
95
16
W
20
4
W
5
180 250 mΩ
%
%
10
µA
%
%
10
µA
8
15
ns
15/68
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