STP3NB90FP(1998) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP3NB90FP
(Rev.:1998)

N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP PowerMESH™ MOSFET

STMicroelectronics 

STP3NB90/FP

THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

TO-220

1.25

TO220-FP

3.57

62.5

0.5

300

oC/W

oC/W

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

IAR

EAS

Parameter

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

Single Pulse Avalanche Energy

(starting Tj = 25 oC, ID = IAR, VDD = 50 V)

Max Value

3.5

233

Unit

A

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbol

V(BR)DSS

IDSS

IGSS

Parameter

Test Conditions

Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gate Voltage

VDS = Max Rating

Drain Current (VGS = 0) VDS = Max Rating

Tc = 125 oC

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30 V

Min.

900

Typ.

Max.

Unit

V

1

µA

50

µA

± 100 nA

ON (∗)

Symbol

VGS(th)

RDS(on)

ID(on)

Parameter

Test Conditions

Gate Threshold

Voltage

VDS = VGS ID = 250 µA

Static Drain-source On VGS = 10V ID = 1.7 A

Resistance

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

Min.

3

Typ.

4

Max.

5

Unit

V

4

4.2

Ω

3.5

A

DYNAMIC

Symbol

gfs (∗)

Ciss

Coss

Crss

Parameter

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max ID = 1.7 A

Min.

1.6

Typ.

Max.

Unit

S

VDS = 25 V f = 1 MHz VGS = 0

700

pF

90

pF

7

pF

2/6

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