STP3NB90FP(1998) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3NB90FP
(Rev.:1998)
(Rev.:1998)
STMicroelectronics
STP3NB90FP Datasheet PDF : 6 Pages
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STP3NB90/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 450 V ID = 1.7 A
RG = 4.7 Ω
VGS = 10 V
Min.
Typ.
TBD
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 720 V ID = 3.5 A VGS = 10 V
21
nC
Qgs Gate-Source Charge
8
nC
Qgd Gate-Drain Charge
9
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 720V ID = 3.5 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3.5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 3.5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
TBD
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
3.5
14
Unit
A
A
1.6
V
TBD
ns
µC
A
3/6
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