STP40N20FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP40N20FP
STMicroelectronics
STP40N20FP Datasheet PDF : 18 Pages
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STB40N20 - STP40N20 - STP40N20FP - STW40N20
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D2PAK
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate- source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25°C
40
A
ID(1)
Drain current (continuous) at TC = 100°C
25
A
IDM(2)
) Ptot
ct(s dv/dt (3)
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Peak diode recovery voltage slope
Produ VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
te Tstg
Storage temperature
le Tj
Max. operating junction temperature
so 1. Value limited by wire bonding
b 2. Pulse width limited by safe operating area.
O 3. ISD ≤40A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
160
160
40
1.28
0.32
12
--
2500
-55 to 150
A
W
W/°C
V/ns
V
°C
t(s) - Table 2. Thermal data
roduc Rthj-case Thermal resistance junction-case max
P Rthj-amb Thermal resistance junction-ambient max
leteTJ
Maximum lead temperature for soldering
purpose(1)
Obso 1. for 10 sec. 1.6mm from case
TO-220
D2PAK
TO-247
0.78
62.5
50
TO-220FP
3.1
°C/W
62.5 °C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-
IAR
Repetitive
40
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
230
A
mJ
3/18
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