STP40N20FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP40N20FP
STMicroelectronics
STP40N20FP Datasheet PDF : 18 Pages
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STB40N20 - STP40N20 - STP40N20FP - STW40N20
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 20A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A,
di/dt = 100A/µs,
VDD = 25V
(see Figure 18)
40
A
160 A
1.5 V
192
ns
922
nC
9.6
A
trr
Reverse recovery time
ISD = 20A,
di/dt = 100A/µs,
242
ns
Qrr
IRRM
Reverse recovery charge
Reverse recovery current VDD = 25V, Tj = 150°C
(see Figure 18)
1. Pulse width limited by safe operating area.
Obsolete Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
1440
nC
11.9
A
5/18
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