STP45NE06LFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP45NE06LFP

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET™ POWER MOSFET

STMicroelectronics 

STP45NE06L

®

STP45NE06LFP

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP

STripFET™ POWER MOSFET

TYPE

STP45NE06L

STP45NE06LFP

VDSS

60 V

60 V

RDS(on)

< 0.028 Ω

< 0.028 Ω

ID

45 A

25 A

PRELIMINARY DATA

s TYPICAL RDS(on) = 0.022 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE 100 oC

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique "Single Feature

Size™ " strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP45NE06L STP45NE06LFP

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

IDM(•)

Ptot

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

dv/dt Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1999

60

V

60

V

± 20

V

45

25

A

31

17.5

A

180

180

A

100

0.67

35

0.23

W

W/oC



2000

V

7

-65 to 175

175

(1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ns

oC

oC

1/6

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