STP45NE06LFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP45NE06LFP
STMicroelectronics
STP45NE06LFP Datasheet PDF : 6 Pages
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STP45NE06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7Ω
VDD = 48 V
ID = 22.5 A
VGS = 5 V
ID = 45 A VGS = 5 V
Min.
Typ.
37
100
31
13
13
Max.
50
135
42
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 45 A
RG =4.7 Ω VGS = 10 V
Min.
Typ.
20
45
72
Max.
27
61
100
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD =45 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 45 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
45
180
Unit
A
A
1.5
V
90
ns
225
nC
5
Α
3/6
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