STPS160AY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS160AY Datasheet PDF : 9 Pages
| |||
Characteristics
1
Characteristics
STPS160-Y
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
IF(AV) Average forward current
TL = 130 °C, δ = 0.5
1
IFSM Surge non repetitive forward current tp =10 ms sinusoidal
75
IRRM Repetitive peak reverse current
tp = 2 µs F = 1 kHz square
1
IRSM Non repetitive peak reverse current tp = 100 µs square
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
2400
Tstg Storage temperature range
Tj Operating junction temperature range(1)
-65 to + 150
-40 to + 150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
V
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-l) Junction to lead
SMA
SMB
30
°C/W
23
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 1 A
IF = 2 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.49 x IF(AV) + 0.08 IF2(RMS)
4
µA
1.1
4
mA
0.67
0.49 0.57
V
0.8
0.58 0.65
2/9
Doc ID 023383 Rev 1
Share Link: 