STPS15H100C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS15H100C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS15H100C-Y
Table 2. Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
100
IF(RMS) Forward rms current
10
IF(AV) Average forward current
Tc = 135 °C Per diode
7.5
δ = 0.5
Per device
15
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
75
IRRM Peak repetitive reverse current
tp = 2 µs square F= 1 kHz
1
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
6600
Tstg Storage temperature range
Tj Operating junction temperature (1) range
- 65 to + 175
-40 to +175
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
V
A
A
A
A
W
°C
°C
V/µs
Unit
Rth(j-c) Junction to case
Per diode
Total
Rth(c) Coupling
When the diodes 1 and 2 are used simultaneously :
Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
4
2.4
°C/W
0.7
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
VF((1)) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 7.5 A
IF = 7.5 A
IF = 12 A
IF = 12 A
IF = 15 A
IF = 15 A
To evaluate the conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.012 IF2(RMS)
3
µA
1.3
4
mA
0.8
0.62 0.67
0.85
V
0.68 0.73
0.89
0.71 0.76
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Doc ID 17686 Rev 1
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