STPS15H100CB(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS15H100CB Datasheet PDF : 4 Pages
| |||
STPS15H100CB
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Parameter
Per diode
Total
Value
4
2.4
0.7
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 7.5 A
Tj = 125°C
IF = 7.5 A
Tj = 25°C
IF = 12 A
Tj = 125°C
Tj = 25°C
IF = 12 A
IF = 15 A
Tj = 125°C
IF = 15 A
Min. Typ. Max. Unit
3
mA
1.3 4
mA
0.8
V
0.62 0.67
0.85
0.68 0.73
0.89
0.71 0.76
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.58 x IF(AV) + 0.012 IF2(RMS)
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
7
IF(av)(A)
9
6
δ = 0.5
8
Rth(j-a)=Rth(j-c)
5
δ = 0.2
δ = 0.1
4
δ = 0.05
7
δ=1
6
5
3
4
3
Rth(j-a)=70°C/W
2
T
2
T
1
IF(av)(A)
δ=tp/T
tp
1
δ=tp/T
tp
0
0
0
1
2
3
4
5
6
7
8
9
0
25
50
Tamb(°C)
75
100
125
150
175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
2/4
Share Link: 