STPS15H100CB(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS15H100CB Datasheet PDF : 4 Pages
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STPS15H100CB
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
100
90
80
70
60
50
40
30
20
IM
10
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+01
1.E+00
Tj=150°C
Tj=125°C
1.E-01
1.E-02
1.E-03
1.E-04
0
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80
90 100
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
C(nF)
1.0
F=1MHz
Vosc =30mV
Tj=25°C
0.1
0.0
1
VR(V)
10
100
Fig. 9: Forward voltage drop versus forward current.
IFM(A)
100
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
10
Tj=25°C
(Maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu = 35µm).
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10
S(cm²)
0
0
2
4
6
8
10 12 14 16 18 20
3/4
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