STPS1L20MF View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L20MF Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS1L20MF
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
20
IF(RMS) Forward current rms
IF(AV) Average forward current
2
Tc = 140 °C δ = 0.5
1
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
50
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1400
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
- 65 to + 150
150
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
10000
Table 3. Thermal resistance
V
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(j-a)(1) Junction to ambient
1. Mounted with minimum recommended pad size, PC board FR4
20
°C/W
250
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
VF (1)
Tj = 25 °C
Tj = 85 °C
Tj = 25 °C
Reverse leakage current
Tj = 85 °C
Tj = 25 °C
Tj = 85 °C
Tj = 25 °C
Tj = 85 °C
Tj = 25 °C
Forward voltage drop
Tj = 85 °C
Tj = 25 °C
Tj = 85 °C
Tj = 25 °C
Tj = 85 °C
VR = VRRM
VR = 10 V
VR = 5 V
IF = 1 A
IF = 2 A
IF = 3 A
IF = 4 A
1. Pulse test: = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.32 x IF(AV) + 0.05 IF2(RMS)
0.015 0.075
0.90 4.50
0.005 0.035
mA
0.45 2.50
0.003 0.025
0.30 1.60
0.38 0.43
0.32 0.37
0.42 0.47
0.37 0.42
V
0.46 0.53
0.42 0.49
0.50 0.60
0.46 0.56
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Doc ID 12640 Rev 2
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