STPS20L45C View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS20L45C

Low drop power Schottky rectifier

STMicroelectronics 

Characteristics

STPS20L45C

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

45

V

IF(RMS) Forward rms current

30

A

TO-220AB / TC = 135 °C Per diode

10

Average forward

D²PAK

TC = 130 °C Per device

20

IF(AV) current

A

δ = 0.5, square wave TO-220FPAB TC = 115 °C Per diode

10

TC = 100 °C Per device

20

IFSM Surge non repetitive forward current

tp = 10 ms

sinusoidal

180

A

PARM

Tstg

Tj

Repetitive peak avalanche power

Storage temperature range

Maximum operating junction temperature (1)

tp = 10 µs,

Tj = 125 °C

285

W

-65 to +150

°C

150

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Symbol

Rth(j-c) Junction to case

Rth(c) Coupling

Table 3: Thermal parameters

Parameter

Per diode

TO-220FPAB

Total

TO-220AB

D²PAK

Per diode

Total

TO-220FPAB

TO-220AB

D²PAK

Max. value

4.5

3.5

2.2

1.3

2.5

Unit

°C/W

0.3

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

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