STPS20L45C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20L45C Datasheet PDF : 15 Pages
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Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
8
7
δ = 0.05
6
5
4
3
2
1
0
0
2
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV) (A)
δ = tp/T
tp
4
6
8
10
12
14
STPS20L45C
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(AV) (A)
12
11
Rth(j-a) = Rth(j-c)
TO-220AB
10
9
TO-220FPAB
8
7
Rth(j-a) = 15 °C/W
6
5
4
3
T
2
1
δ = tp/T
tp
0
Tamb(°C)
0
25
50
75
100
125
150
Figure 3: Normalized avalanche power deratings
versus pulse duration (Tj = 125 °C)
PARM(t p )
1 PARM(10 µs)
Figure 4: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(mA)
2E+2
1E+2
Tj = 150 °C
1E+1
Tj = 125 °C
0.1
Tj = 75 °C
1E+0
0.01
0.001
1
1E-1
Tj = 25 °C
1E-2
t p(µs)
10
100
1000
1E-3
VR(V)
0
5
10
15
20
25
30
35
40
45
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AB, D²PAK)
Zth(j-c)/Rth(j-c)
1 .0
Figure 6: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB)
1.0 Zth(j-c)/Rth(j-c)
0 .8
δ = 0.5
0 .6
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0 .2
Single pulse
0 .0
1 E- 3
tp(s )
1 E- 2
0.4
δ = 0.2
T
0.2 δ = 0.1
δ = tp/T
1 E- 1
tp
1 E+0
Single pulse
0.0
1E-3
1E-2
tp(s )
1E-1
T
δ = tp/T
1E+0
tp
1E+1
4/15
DocID8001 Rev 5
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