STPS20L60C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20L60C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS20L60C-Y
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
60
30
TC = 140 °C Per diode
10
= 0.5
Per device
20
IFSM Surge non repetitive forward current
tp = 10 ms, sinusoidal
220
IRRM Repetitive peak reverse current
tp = 2 µs square, F = 1 kHz
1
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
5800
Tstg Storage temperature range
Tj Operating junction temperature range(1)
-65 to + 175
-40 to + 150
dV/dt Critical rate of rise reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
10000
Table 3. Thermal resistances
Symbol
Parameter
Value
V
A
A
A
A
W
°C
°C
V/µs
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
1.6
C/W
0.85
0.1
C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
VF (1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.014 x IF2(RMS)
350
µA
65
95
mA
0.6
0.48 0.56
V
0.74
0.62
0.7
2/7
Doc ID 022399 Rev 1
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