STPS20L60C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20L60C-Y Datasheet PDF : 7 Pages
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STPS20L60C-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average current versus ambient
temperature (= 0.5) (per diode)
PF(av)(W)
8
7
δ = 0.05
6
5
4
δ = 0.1
δ = 0.2
IF(av)(A)
12
δ = 0.5
δ=1
10
8
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
3
2
T
4
T
2
1
IF(av) (A)
δ=tp/T
tp
δ=tp/T
tp
Tamb(°C)
0
0
1
2
3
4
5
6
7
8
0
9 10 11 12 0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
transient impedance junction to
case versus pulse duration
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Zth(j-c)/Rth(j-c)
1.0
0.8
Tc=25°C
Tc=75°C
Tc=100°C
1E+0
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 022399 Rev 1
3/7
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