STPS30L30CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30L30CR Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS30L30C
Table 2.
Symbol
Absolute ratings (limiting values per diode)
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current δ = 0.5
Tc = 140 °C,
Per diode
Per device
IFSM
IRRM
IRSM
PARM(1)
VARM (2)
VASM (2)
Tstg
Tj
dV/dt
Surge non repetitive forward current tp = 10 ms sinusoidal,
Peak repetitive reverse current
tp = 2 µs square, F= 1 kHz square
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
Maximum repetitive peak avalanche tp < 1 µs Tj < 150 °C
voltage
IAR < 35 A
Maximum single pulse peak
avalanche voltage
tp < 1 µs Tj < 150 °C
IAR < 35 A
Storage temperature range
Maximum operating junction temperature (3)
Critical rate of rise of reverse voltage
30
V
30
A
15
A
30
220
A
1
A
3
A
5300
W
45
V
45
V
-65 to + 175
150
10000
°C
°C
V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance(1)
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Per diode
Total
1.5
0.8
°C/W
Rth(c) Coupling
0.1
1. When the diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30A
To evaluate the conduction losses use the following equation:
P = 0.24 x IF(AV) + 0.009 x IF2(RMS)
1.5 mA
170 350 mA
0.46
0.33 0.37
V
0.57
0.43 0.5
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Doc ID 5506 Rev 6
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