STPS30L30CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30L30CR Datasheet PDF : 9 Pages
| |||
STPS30L30C
Characteristics
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current per diode
versus ambient temperature
(δ = 0.5)
PF(av)(W)
10
9
8
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
7
6
5
4
3
2
1
IF(av) (A)
0
0 2 4 6 8 10 12 14
δ=1
T
δ=tp/T
tp
16 18 20
IF(av)(A)
16
14
12
Rth(j-a)=15°C/W
10
8
Rth(j-a)=50°C/W
6
4
T
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
Rth(j-a)=Rth(j-c)
100 125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
P ARM(t p)
P ARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
t p(µs)
1
10
100
1000
P ARM(T j)
P ARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
T j(°C)
50
75
100
125
150
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration,
(maximum values per diode)
Relative variation of thermal
impedance junction to case
versus pulse duration
IM(A)
250
225
200
175
150
125
100
75
50 IM
25
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=110°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 5506 Rev 6
3/9
Share Link: 