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STPS20120CR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS20120CR
ST-Microelectronics
STMicroelectronics 
STPS20120CR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
STPS20120C
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Rth(c)
Junction to case
I2PAK / TO-220AB
TO-220FPAB
Coupling
I2PAK / TO-220AB
TO-220FPAB
Per diode
Total
Per diode
Total
Total
Value
3
1.8
5.5
4.5
0.6
3.5
Unit
° C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 3.
Symbol
Static electrical characteristics (per diode)
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 µs, δ < 2%
Tj = 25° C
VR = VRRM
Tj = 125° C
Tj = 25° C
Tj = 125° C IF = 2.5 A
Tj = 25° C
IF = 10 A
Tj = 125° C
Tj = 25° C
IF = 20 A
Tj = 125° C
10
µA
1.5
5
mA
0.7
0.54 0.58
0.92
V
0.7 0.74
1.02
0.81 0.86
To evaluate the maximum conduction losses use the following equation :
P = 0.62 x IF(AV) + 0.012 IF2(RMS)
2/9

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