STPS20120CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20120CR Datasheet PDF : 9 Pages
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STPS20120C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
10
9
8
7
6
5
4
3
2
1
0
012
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
3 4 5 6 7 8 9 10 11 12 13
IF(AV)(A)
11
10
Rth(j-a)=Rth(j-c)
9
8
TO-220FPAB
Rth(j-a)=15°C/W
7
TO-220AB
I²PAK
6
5
4
3
T
2
1
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB / I2PAK)
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
IM(A)
140
IM(A)
100
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
80
60
40
20 IM
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
3/9
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