DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPS3L25 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS3L25
ST-Microelectronics
STMicroelectronics 
STPS3L25 Datasheet PDF : 4 Pages
1 2 3 4
STPS3L25S
THERMAL RESISTANCES
Symbol
Rth(j-l) Junction to lead
Parameter
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 3 A
Tj = 125°C
Tj = 25°C
IF = 6 A
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
Value
20
Unit
°C/W
Min. Typ. Max. Unit
90
µA
15 30 mA
0.49 V
0.37 0.44
0.6
0.5 0.58
To evaluate the maximum conduction losses use the following equation :
P = 0.3 x IF(AV) + 0.047 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(av) (A)
δ=tp/T
tp
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
2.5
2.0
Rth(j-a)=90°C/W
1.5
1.0
T
0.5
δ=tp/T
tp
Tamb(°C)
0.0
0
25
50
75 100 125 150
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
14
12
10
8
6
4
IM
2
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=50°C
Ta=100°C
1E+0
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6 δ = 0.5
0.4
0.2
δ = 0.2
δ = 0.1
0.0
1E-2
Single pulse
1E-1
T
tp(s)
1E+0 1E+1
δ=tp/T
tp
1E+2 5E+2
2/4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]