STPS41H100C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS41H100C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS41H100C-Y
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
30
A
IF(AV) Average forward current
Tc = 50 °C Per diode
20
A
δ = 0.5
Per device
40
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
220
IRRM Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
18100
Tstg Storage temperature range
Tj Maximum operating junction temperature range(1)
-65 to + 175
-40 to + 175
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Per diode
Total
1.5
0.8
°C/W
Rth(c) Coupling
0.1
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
Tj = 25 °C IF = 20 A
VF(1)
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 20 A
IF = 40 A
Tj = 125 °C IF = 40 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.0045 IF2(RMS)
10
μA
3
10
mA
0.80
0.62 0.67
V
0.90
0.70 0.76
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Doc ID 018564 Rev 1
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