DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPS41H100C-Y View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS41H100C-Y
ST-Microelectronics
STMicroelectronics 
STPS41H100C-Y Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STPS41H100C-Y
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(av)(W)
16
14
12
δ = 0.1
10
δ = 0.05
8
δ = 0.2
δ = 0.5
δ=1
IF(av)(A)
22
20
18
16
14
12
10
Rth(j-a)=Rth(j-c)
6
8
4
6
T
Rth(j-a)=50°C/W
4
T
2
IF(av)(A)
δ=tp/T
tp
2
δ=tp/T
tp
Tamb(°C)
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
tp(µs)
0
Tj(°C)
10
100
1000
25
50
75
100
125
150
Figure 5.
IM(A)
300
Non repetitive surge peak forward
current versus overload duration
(maximum values)
250
200
150
100
50 IM
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Doc ID 018564 Rev 1
3/7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]