STPS60L30C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS60L30C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS60L30C-Y
Table 2.
Symbol
Absolute rating (limiting value, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
30
IF(RMS)(1) Forward rms current
45
IF(AV)(1) Average forward current
Tc = 130 °C, δ = 0.5 Per diode
30
Square pulse
Per device
60
IFSM(1) Surge non repetitive forward current
tp = 10 ms Sinusoidal
250
Tstg Storage temperature range
-65 to +175
Tj
Operating junction temperature range
-40 to +150
TR Recommended reflow soldering temperature range
245 +0/-5
1. All anode pins (A1, A2) must be connected
Table 3.
Symbol
Thermal parameters
Parameter
Value
Rth(j-c) Junction to case
Per diode
0.95
Per device
0.61
Rth(c) Coupling
0.27
When diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
V
A
A
A
°C
°C
°C
Unit
°C/W
°C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
2
mA
400
mA
Tj = 25 °C IF = 10 A
0.420
VF(1) (2)
Tj = 125 °C
Forward voltage drop
IF = 10 A
Tj = 25 °C IF = 30 A
0.310
V
0.490
Tj = 125 °C IF = 30 A
0.415
1. Pulse test : tp = 380 µs, δ < 2%
2. All anode pins (A1, A2) must be connected
To evaluate the maximum conduction losses use the following equation:
P = 0.315 x IF(AV) + 0.00333 x IF2(RMS)
2/7
Doc ID 18296 Rev 1
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