STPS60L30C-Y View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS60L30C-Y

Automotive power Schottky rectifier

STMicroelectronics 

STPS60L30C-Y

Characteristics

Figure 1.

Average forward power dissipation Figure 2.

versus average forward current

Average forward current versus

ambient temperature per diode

(δ = 0.5)

24 PF(AV)(W)

22 (per diode, all anode pins connected)

20

18

16

δ = 0.2

14

δ = 0.05 δ = 0.1

12

10

δ = 0.5

δ=1

35 IF(AV)(A)

(per diode, all anode pins connected)

30

Rth(j-a) = Rth(j-c)

25

20

Rth(j-a) = 10 °C/W

15

8

6

10

4

T

5

2

0

IF(AV)(A)

0 δ = tp / T tp

Tamb(°C)

0

5

10

15

20

25

30

35

40

45

0

25

50

75

100

125

150

Figure 3.

Non repetetive surge peak forward Figure 4.

current versus overload duration

(maximum values)

Relative variation of thermal

impedance, junction to case,

versus pulse duration

400 IM(A)

350

(per diode, all anode pins connected)

300

250

200

150

100

IM

50

0

1.E-03

t

δ = 0.5

1.E-02

1.E-01

Tc = 25 °C

Tc = 75 °C

Tc = 125 °C

t(s)

1.E+00

1.0 Zth(j-c)/Rth(j-c)

0.9

(per diode, all anode pins connected)

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

1.E+01

Figure 5.

Reverse leakage current versus Figure 6.

reverse voltage applied (per diode)

(typical values)

1.E+03 IR(mA)

Tj = 150 °C

C(nF)

10.0

1.E+02

Tj = 125 °C

Tj = 100 °C

1.E+01

Tj = 75 °C

1.0

1.E+00

Tj = 50 °C

1.E-01

Tj = 25 °C

1.E-02

0

VR(V)

0.1

5

10

15

20

25

30

1

Junction capacitance versus

reverse voltage applied (per diode)

(typical values)

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

VR(V)

10

100

Doc ID 18296 Rev 1

3/7

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